APTLGF350A608G APTLGF350A608G ? rev 1 february, 2011 www.microsemi.com 1-7 out 0/vbus vbus gnd vdd gnd inl vdd inh these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com v ces = 600v i c = 350a @ tc = 80c phase leg intelligent power module application ? motor control ? uninterruptible power supplies ? switched mode power supplies ? amplifier features ? non punch through (npt) fast igbt - low voltage drop - low tail current - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa & scsoa rated ? integrated fail safe igbt protection (driver ) - top bottom input signals interlock - isolated dc/dc converter ? low stray inductance ? m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? very high noise immunity (common mode rejection > 25kv/s) ? galvanic isolation: 3750v for the optocoupler 2500v for the transformer ? 5v logic level with schmitt-trigger input ? single v dd =5v supply required ? secondary auxiliary power supplies internally generated (15v, -6v) ? optocoupler qualified to aec-q100 test quidelines ? rohs compliant
APTLGF350A608G APTLGF350A608G ? rev 1 february, 2011 www.microsemi.com 2-7 all ratings @ t j = 25c unless otherwise specified 1. inverter power module absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 430 i c continuous collector current t c = 80c 350 i cm pulsed collector current t c = 25c 700 a p d maximum power dissipation t c = 25c 1562 w rbsoa reverse bias safe operating area t j = 125c 800a@550v electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 0.5 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 1.5 ma t j = 25c 2 2.5 v ce(sat) collector emitter saturation voltage v dd = v in = 5v i c = 400a t j = 125c 2.2 v dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 17.2 c oes output capacitance 1.88 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 1.6 nf t r rise time 25 t f fall time inductive switching (25c) v dd = v in = 5v v bus = 400v ; i c = 400a 30 ns t r rise time 25 t f fall time 45 ns e on turn-on switching energy 17.2 e off turn-off switching energy inductive switching (125c) v dd = v in = 5v v bus = 400v i c = 400a 14 mj i sc short circuit data v dd = v in = 5v; v bus =360v t p 10s ; t j = 125c 1800 a r thjc junction to case thermal resistance 0.08 c/w
APTLGF350A608G APTLGF350A608G ? rev 1 february, 2011 www.microsemi.com 3-7 reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 100 i rm maximum reverse leakage current v r =600v t j = 125c 2000 a i f dc forward current tc = 80c 240 a i f = 240a 1.7 2.3 i f = 480a 2 v f diode forward voltage i f = 240a t j = 125c 1.4 v t j = 25c 70 t rr reverse recovery time t j = 125c 140 ns t j = 25c 400 q rr reverse recovery charge i f = 240a v r = 400v di/dt = 800a/s t j = 125c 2760 nc r thjc junction to case thermal resistance 0.22 c/w 2. driver absolute maximum ratings symbol parameter max ratings unit v dd supply voltage 5.5 v ini input signal voltage i=l, h 5.5 v v ini = 0v, i =l & h 0.35 i vddmax maximum supply current v dd =5v, v inh = /v inl ; f out = 60khz 2 a f max maximum switching frequency 60 khz driver electrical characteristics symbol characteristic test conditions min typ max unit v dd operating supply voltage 4.5 5 5.5 v v ini(max) maximum input voltage -0.5 5 5.5 v ini (th+) positive going threshold voltage 3.2 v ini(th-) negative going threshold voltage 1 v r ini input resistance * i = l, h 1 k ? t d(on) turn on delay time driver + igbt 1100 n d t built in dead time 600 t d(off) turn off delay time driver + igbt 750 ns pwd pulse width distortion 300 pdd propagation delay difference between any two driver t d(on) - t d(off) -350 350 ns v isol primary to secondary isolation 2500 v rms * low impedance guarantees good noise immunity. n including built in dead time.
APTLGF350A608G APTLGF350A608G ? rev 1 february, 2011 www.microsemi.com 4-7 3. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t op operating ambient temperature -40 85 t stg storage temperature range -40 100 t c operating case temperature -40 100 c to heatsink m5 2 4.7 torque mounting torque for terminals m5 2 4 n.m wt package weight 550 g 4. lp8 package outline (dimensions in mm) ra 3,2
APTLGF350A608G APTLGF350A608G ? rev 1 february, 2011 www.microsemi.com 5-7 typical igbt performance curve output characteristics t j =25c t j =125c 0 200 400 600 800 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle v dd = 5v v in = 5v 0.80 0.90 1.00 1.10 1.20 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 100 200 300 400 500 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature t j =125c 0 20 40 60 80 100 200 300 400 500 600 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v v dd = 5v v in = 5v t j = 25c t j = 125c 0 20 40 60 80 100 200 300 400 500 600 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v v dd = 5v v in = 5v t j =25c t j =125c 0 8 16 24 32 100 200 300 400 500 600 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v v dd = 5v v in = 5v t j = 25c t j = 125c 0 4 8 12 16 20 24 100 200 300 400 500 600 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v dd = 5v v in = 5v 0 200 400 600 800 1000 0 100 200 300 400 500 600 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
APTLGF350A608G APTLGF350A608G ? rev 1 february, 2011 www.microsemi.com 6-7 cies cres coes 100 1000 10000 100000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current hard switching 0 10 20 30 40 50 60 70 0 100 200 300 400 500 i c , collector current (a) f max , o p eratin g fre q uenc y ( khz ) v ce = 400v d = 50% v dd = 5v v in = 5v t j = 125c t c =75c limited by internal gate drive power dissipation
APTLGF350A608G APTLGF350A608G ? rev 1 february, 2011 www.microsemi.com 7-7 typical diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 120 a 240 a 480 a 0 20 40 60 80 100 120 140 160 0 800 1600 2400 3200 4000 4800 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 120 a 240 a 480 a 50 75 100 125 150 175 0 800 1600 2400 3200 4000 4800 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 120 a 240 a 480 a 0.0 2.0 4.0 6.0 8.0 0 800 1600 2400 3200 4000 4800 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 400 800 1200 1600 2000 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) microsemi reserves the right to change, without notice, the specifications and info rmation contained herein
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